Product Information

STD110N8F6

STD110N8F6 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 80 V, 0.0058 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1786 ea
Line Total: USD 1.18

2395 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2395 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STD110N8F6
STMicroelectronics

1 : USD 1.1786
10 : USD 1.147
25 : USD 1.0834
100 : USD 0.9372
250 : USD 0.9185
500 : USD 0.9185
1000 : USD 0.9185

2395 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 9
Multiples : 1

Stock Image

STD110N8F6
STMicroelectronics

9 : USD 1.1786
10 : USD 1.147
25 : USD 1.0834
100 : USD 0.9372
250 : USD 0.9185

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Height
Length
Product
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STD110N8F6 N-channel 80 V, 0.0056 typ.,80 A, STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R I P DS DS(on)max D TOT % STD110N8F6 80 V 0.0065 80 A 167 W Very low on-resistance Very low gate charge High avalanche ruggedness . 3 Low gate drive power loss Applications Figure 1. Internal schematic diagram Switching applications Description % 7 This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) * packages. 6 0 Y Table 1. Device summary Order code Marking Package Packing STD110N8F6 110N8F6 DPAK Tube December 2014 DocID027274 Rev 1 1/16 This is information on a product in full production. www.st.com 7 Contents STD110N8F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 5 Packing information 13 6 Revision history . 15 2/16 DocID027274 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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