STD110N8F6 STMicroelectronics

STD110N8F6 N-channel 80 V, 0.0056 typ.,80 A, STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R I P DS DS(on)max D TOT % STD110N8F6 80 V 0.0065 80 A 167 W Very low on-resistance Very low gate charge High avalanche ruggedness . 3 Low gate drive power loss Applications Figure 1. Internal schematic diagram Switching applications Description % 7 This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) * packages. 6 0 Y Table 1. Device summary Order code Marking Package Packing STD110N8F6 110N8F6 DPAK Tube December 2014 DocID027274 Rev 1 1/16 This is information on a product in full production. www.st.com 7 Contents STD110N8F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 5 Packing information 13 6 Revision history . 15 2/16 DocID027274 Rev 1