Product Information

STD16NF06T4

STD16NF06T4 electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 60V; 11A; 40W; DPAK
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

15: USD 0.8096 ea
Line Total: USD 12.14

851 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 15  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
820 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 15
Multiples : 1

Stock Image

STD16NF06T4
STMicroelectronics

15 : USD 0.6761
25 : USD 0.5391
100 : USD 0.5283

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
Kind Of Package
LoadingGif

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Additional Infomation About Product

STD16NF06 N-Channel 60V - 0.060 - 16A - DPAK STripFET II Power MOSFET General features V R I Type DSS DS(on) D STD16NF06 60V <0.070 16A 3 Typical R = 0.060 DS(on) 1 DPAK Exceptional dv/dt Capability TO-252 100% Avalanche Tested Application Oriented Characterization Description Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility Applications Audio Amplifiers Power Tools Automotive Environment Order codes Part Number Marking Package Packaging STD16NF06T4 D16NF06 TO-252 TAPE & REEL Rev 1 January 2006 1/11 www.st.com 111 Electrical ratings STD16NF06 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source Voltage (V = 0V) 60 V DS GS V Drain-gate Voltage (R = 20 k ) 60 V DGR GS V Gate-Source Voltage 20 V GS I Drain Current (continuous) at T = 25C 16 A D C I Drain Current (continuous) at T = 100C 11 A D C I Note 4 Drain Current (pulsed) 64 A DM P Total Dissipation at T = 25C 40 W TOT C Derating Factor 0.27 W/C Peak Diode Recovery voltage slope 10.5 V/ns dv/dt EAS Single Pulse Avalanche Energy 178 mJ T J Operating Junction Temperature -55 to 175 C T Storage Temperature stg Table 2. Thermal data R Thermal Resistance Junction-case Max 3.75 C/W thJC R Thermal Resistance Junction-amb Max 100 C/W thJA Maximum Lead Temperature For Soldering T 275 C l Purpose 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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