STD20NF06LAG Datasheet Automotive-grade N-channel 60 V, 32 m typ., 24 A, STripFET II Power MOSFET in a DPAK package Features V R max. I P Order code TAB DS DS(on) D TOT STD20NF06LAG 60 V 40 m 24 A 60 W 3 2 1 DPAK AEC-Q101 qualified Exceptional dv/dt capability D(2, TAB) 100% avalanche tested Low gate charge Applications G(1) Switching applications Description S(3) AM01475v1 noZen This Power MOSFET has been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD20NF06LAG Product summary Order code STD20NF06LAG Marking D20NF06L Package DPAK Packing Tape and reel DS11845 - Rev 3 - October 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD20NF06LAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 60 V DS V Gate-source voltage 18 V GS Drain current (continuous) at T = 25 C 24 case I A D Drain current (continuous) at T = 100 C 17 case (1) I Drain current (pulsed) 96 A DM P Total power dissipation at T = 25 C 60 W TOT case (2) dv/dt Peak diode recovery voltage slope 10 V/ns (3) E Single pulse avalanche energy 225 mJ AS T Storage temperature range stg -55 to 175 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 24 A, di/dt 300 A/ns, V = 80% V SD DD (BR)DSS 3. Starting T = 25C, I = 14 A, V = 60 V. j D DD Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.5 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. DS11845 - Rev 3 page 2/15