Product Information

STD36P4LLF6

STD36P4LLF6 electronic component of STMicroelectronics

Datasheet
MOSFET P-channel 40 V, 0.0175 Ohm typ., 36 A STripFET F6 in a DPAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

28: USD 1.3949 ea
Line Total: USD 39.06

2402 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 28  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2476 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 60
Multiples : 1

Stock Image

STD36P4LLF6
STMicroelectronics

60 : USD 1.642
100 : USD 1.5885
250 : USD 1.5415
500 : USD 1.5107

2402 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 28
Multiples : 1

Stock Image

STD36P4LLF6
STMicroelectronics

28 : USD 1.3949
50 : USD 1.2695
100 : USD 1.0339
200 : USD 0.9665
500 : USD 0.9636
1000 : USD 0.8372
2000 : USD 0.8312

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Transistor Type
Brand
Configuration
Height
Length
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STD36P4LLF6 P-channel 40 V, 0.0175 typ.,36 A, STripFET F6 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD36P4LLF6 40 V 0.0205 36 A 60 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications Switching applications D(2, TAB) Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all G(1) DS(on) packages. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packaging STD36P4LLF6 36P4LLF6 DPAK Tape and reel March 2015 DocID025616 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STD36P4LLF6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 Packing information ......................................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID025616 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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