STD52P3LLH6 STMicroelectronics

STD52P3LLH6 Datasheet P-channel 30 V, 10 m typ., 52 A, STripFET H6 Power MOSFET in a DPAK package Features V R max I P Order codes TAB DSS DS(on) D TOT STD52P3LLH6 30 V 12 m 52 A 70 W 3 2 1 Very low on-resistance DPAK Very low gate charge High avalanche ruggedness D(2, TAB) Low gate drive power loss Applications Switching applications G(1) Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits S(3) AM11258v1 very low R in all packages. DS(on) Product status link STD52P3LLH6 Product summary Order code STD52P3LLH6 Marking 52P3LLH6 Package DPAK Packing Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS10148 - Rev 3 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STD52P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 30 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 52 A C I D Drain current (continuous) at T = 100 C 37.5 A C (1) I Drain current (pulsed) 208 A DM P Total power dissipation at T = 25 C 70 W TOT C T Storage temperature -55 to 175 C stg T Max. operating junction temperature 175 C J 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 2.14 C/W Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. DS10148 - Rev 3 page 2/15