STD4N90K5 STMicroelectronics

STD4N90K5 N-channel 900 V, 1.90 typ.,3 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD4N90K5 900 V 2.10 3 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STD4N90K5 4N90K5 DPAK Tape and reel November 2016 DocID029956 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STD4N90K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK package information ............................................................... 9 4.2 DPAK packing information .............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID029956 Rev 1