STD4NK100Z STMicroelectronics

STD4NK100Z Automotive-grade N-channel 1000 V, 5.6 typ., 2.2 A SuperMESH Power MOSFET Zener-protected in a DPAK Datasheet - production data Features Order code V R I DSS DS(on)max D % STD4NK100Z 1000 V 6.8 2.2 A Designed for automotive applications and AEC-Q101 qualified Extremely high dv/dt capability 100% avalanche tested Gate charge minimized . 3 Very low intrinsic capacitance Zener-protected Figure 1. Internal schematic diagram Applications % 7 Switching application Description This device is an N-channel Zener-protected * Power MOSFET developed using STMicroelectronics SuperMESH technology, achieved through optimization of STs well established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most 6 0 Y BWDE demanding applications. Table 1. Device summary Order code Marking Package Packaging STD4NK100Z 4NK100Z DPAK Tape and reel Note: HTRB test has been performed at 80% of V according to AEC-Q101 rev. C. All the (BR)DSS other tests have been done according to the new rev. D. April 2015 DocID022821 Rev 2 1/16 This is information on a product in full production. www.st.com 7 Contents STD4NK100Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package information . 9 5 Packing information 13 6 Revision history . 15 2/16 DocID022821 Rev 2