STD5N52U Datasheet N-channel 525 V, 1.25 typ., 4.4 A, UltraFASTmesh Power MOSFET in a DPAK package Features V R max. I P Order code TAB DS DS(on) D TOT STD5N52U 525 V 1.50 4.4 A 70 W 3 2 1 Outstanding dv/dt capability DPAK Gate charge minimized Very low intrinsic capacitances Very low R D(2, TAB) DS(on) Extremely low t rr G(1) Applications Switching applications Description S(3) AM01476v1 tab This device is N-channel Power MOSFET developed using UltraFASTmesh technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. Product status link STD5N52U Product summary Order code STD5N52U Marking 5N52U Package DPAK Packing Tape and reel DS6261 - Rev 4 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5N52U Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 4.4 D C A I Drain current (continuous) at T = 100 C 2.8 D C (1) I Drain current (pulsed) 17.6 A DM P Total power dissipation at T = 25 C 70 W TOT C dv/dt Peak diode recovery voltage slope 20 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j ESD Gate-source human body model (R = 1.5 k, C = 100 pF) 2.8 kV 1. Pulse width limited by safe operating area. 2. I 4.4 A, di/dt 400 A/s, V < V , V = 80% V SD DS peak (BR)DSS DD (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 1.79 thj-case C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on a 1-inch FR-4, 2 oz Cu board Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 4.4 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 170 mJ AS j D AR DD DS6261 - Rev 4 page 2/17