STD5N62K3, STF5N62K3 STP5N62K3, STU5N62K3 Datasheet N-channel 620 V, 1.28 typ., 4.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Features TAB 3 2 V R max. I Order code Package DS DS(on) D 1 DPAK 3 2 STD5N62K3 DPAK 1 TO-220FP STF5N62K3 TO-220FP 620 V 1.6 4.2 A TAB STP5N62K3 TO-220 TAB STU5N62K3 IPAK 3 2 1 3 2 100% avalanche tested IPAK 1 TO-220 Extremely high dv/dt capability Very low intrinsic capacitance D(2, TAB) Improved diode reverse recovery characteristics Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These MDmesh K3 Power MOSFETs are the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most Product status link demanding applications. STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3 DS6792 - Rev 3 - September 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD5N62K3, STF5N62K3, STP5N62K3, STU5N62K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220, TO-220FP IPAK V Drain-source voltage 620 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 4.2 A D C 4.2 (1) I Drain current (continuous) at T = 100 C 3 A D C 3 (2) (1) I Drain current (pulsed) 16.8 16.8 A DM P Total dissipation at T = 25 C 70 25 W TOT C (3) Peak diode recovery voltage slope 12 V/ns dv/dt (3) di/dt Diode reverse recovery current slope 400 A/ns Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s T = 25 C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 4.2 A, V V , V = 80% V . SD DSpeak (BR)SS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK TO-220FP R Thermal resistance junction-case 1.79 5 C/W thj-case R Thermal resistance junction-ambient 62.5 100 62.5 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 4.2 A AR (2) E Single pulse avalanche energy 120 mJ AS 1. Pulse width limited by T max. j 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS6792 - Rev 3 page 2/27