STD6N90K5 STMicroelectronics

STD6N90K5 N-channel 900 V, 0.91 typ., 6 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD6N90K5 900 V 1.10 6 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STD6N90K5 6N90K5 DPAK Tape and reel October 2017 DocID029947 Rev 2 1/18 www.st.com This is information on a product in full production. Contents STD6N90K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-252) type A2 package information................................. 10 4.2 DPAK (TO-252) type C2 package information ................................ 12 4.3 DPAK (TO-252) tape and reel mechanical data .............................. 15 5 Revision history ............................................................................ 17 2/18 DocID029947 Rev 2