STD95P3LLH6AG STMicroelectronics

STD95P3LLH6AG Automotive-grade P-channel -30 V, 5 m typ., -80 A STripFET H6 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max. STD95P3LLH6AG -30 V 6.9 m -80 A 104 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge Figure 1: Internal schematic diagram High avalanche ruggedness Low gate drive power loss D(2, TAB) Logic level Applications Switching applications Description G(1) This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R in all DS(on) packages. S(3) AM11258v1 Table 1: Device summary Order code Marking Package Packing STD95P3LLH6AG 95P3LLH6 DPAK Tape and reel July 2016 DocID029600 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STD95P3LLH6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK type A2 package information ................................................ 10 4.2 DPAK packing information .............................................................. 13 5 Revision history ............................................................................ 15 2/16 DocID029600 Rev 1