X-On Electronics has gained recognition as a prominent supplier of STE53NC50 mosfet across the USA, India, Europe, Australia, and various other global locations. STE53NC50 mosfetare a product manufactured by STMicroelectronics. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

STE53NC50

STE53NC50 electronic component of STMicroelectronics
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See Product Specifications
Part No. STE53NC50
Manufacturer: STMicroelectronics
Category: MOSFET
Description: Module; single transistor; Uds:500V; Id:33A; ISOTOP; Ifsm:212A
Datasheet: STE53NC50 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 41.34 ea
Line Total: USD 41.34

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 10
Multiples : 10
10 : USD 44.145
20 : USD 40.875
40 : USD 40.875
50 : USD 40.875
150 : USD 40.875

0 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 100
Multiples : 100
100 : USD 40.9774

0 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 100
Multiples : 100
100 : USD 42.5505

0 - WHS 4


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 41.34
10 : USD 38.1345
50 : USD 36.4142
100 : USD 32.557
500 : USD 31.0825

0 - WHS 5


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 37.3007
2 : USD 35.262

0 - WHS 6


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 40.7351

0 - WHS 7


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 42.1645

0 - WHS 8


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3
Multiples : 1
3 : USD 33.954

     
Manufacturer
Product Category
Technology
Case
Mounting
Electrical Mounting
Polarisation
Semiconductor Structure
Kind Of Package
Type Of Module
Max Forward Impulse Current
Drain Current
Gate-Source Voltage
On-State Resistance
Drain-Source Voltage
Power Dissipation
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STE53NC50 N-CHANNEL 500V - 0.070 - 53A ISOTOP PowerMeshII MOSFET TYPE V R I DSS DS(on) D STE53NC50 500V < 0.08 53 A n TYPICAL R (on) = 0.07 DS n EXTREMELY HIGH dv/dt CAPABILITY n 100% AVALANCHE TESTED n NEW HIGH VOLTAGE BENCHMARK n GATE CHARGE MINIMIZED ISOTOP DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM charge and ruggedness. APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 500 V DS GS V Drain-gate Voltage (R = 20 k) 500 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuos) at T = 25C 53 A D C I Drain Current (continuos) at T = 100C 33 A D C I (l) Drain Current (pulsed) 212 A DM P Total Dissipation at T = 25C 460 W TOT C Derating Factor 3.68 W/C dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns V Insulation Winthstand Voltage (AC-RMS) 2500 V ISO T Storage Temperature 65 to 150 C stg T Max. Operating Junction Temperature 150 C j (1) I 53A, di/dt100 A/s, V 24V, TjT SD DD jMAX ()Pulse width limited by safe operating area May 2002 1/8STE53NC50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.272 C/W Rthc-h Thermal Resistance Case-heatsink with Conductive 0.05 C/W Grease Applied AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 53 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 1043 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V = 0 500 V (BR)DSS D GS Breakdown Voltage I Zero Gate Voltage V = Max Rating DSS DS 10 A Drain Current (V = 0) GS V = Max Rating, T = 125 C 100 A DS C I Gate-body Leakage V = 30V 100 nA GSS GS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V V = V , I = 250A GS(th) Gate Threshold Voltage DS GS D 23 4 V R Static Drain-source On V = 10V, I = 27A 0.07 0.08 DS(on) GS D Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (1) Forward Transconductance V > I x R 42 S fs DS D(on) DS(on)max, I = 15 A D C Input Capacitance V = 25V, f = 1 MHz, V = 0 11.2 nF iss DS GS C Output Capacitance 1350 pF oss C Reverse Transfer 115 pF rss Capacitance Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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