STF10LN80K5 STMicroelectronics

STF10LN80K5 N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF10LN80K5 800 V 0.63 8 A Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra-low gate charge 100% avalanche tested Zener-protected TO-220FP Applications Switching applications Figure 1: Internal schematic diagram D(2) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate G(1) charge for applications requiring superior power density and high efficiency. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packing STF10LN80K5 10LN80K5 TO-220FP Tube December 2015 DocID027751 Rev 3 1/14 www.st.com This is information on a product in full production. Contents STF10LN80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220FP package information ...................................................... 11 5 Revision history ............................................................................ 13 2/14 DocID027751 Rev 3