STD17NF25, STF17NF25, STP17NF25 Datasheet N-channel 250 V, 0.140 typ., 17 A STripFET II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Features TAB 2 3 1 DPAK V R max. I P Order code DS DS(on) D TOT TAB STD17NF25 90 W STF17NF25 250 V 0.165 17 A 25 W 3 2 3 1 2 1 TO-220FP TO-220 STP17NF25 90 W D(2, TAB) Exceptional dv/dt capability 100% avalanche tested Low gate charge G(1) Applications Switching applications S(3) AM01475v1 noZen Description These Power MOSFETs have been developed using STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status link STD17NF25 STF17NF25 STP17NF25 DS5089 - Rev 3 - May 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD17NF25, STF17NF25, STP17NF25 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220, DPAK TO-220FP V Drain-source voltage 250 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 17 17 A D C (1) I Drain current (continuous) at T = 100 C 10 10 A D C (2) (1) I Drain current (pulsed) 68 68 A DM P Total dissipation at T = 25 C 90 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 10 V/ns Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat sink (t = 1 s T = 25 C) c T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 17 A, di/dt 200 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220FP TO-220 R Thermal resistance junction-case 1.38 5 1.38 thj-case R Thermal resistance junction-ambient 62.5 thj-amb C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on 1inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 17 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 100 mJ AS j D AR DD DS5089 - Rev 3 page 2/24