STD2HNK60Z, STD2HNK60Z-1 Datasheet N-channel 600 V, 3.5 typ., 2 A SuperMESH Power MOSFETs in DPAK and IPAK packages Features V R max. I Order codes DS DS(on) D TAB STD2HNK60Z TAB 600 V 4.8 2 A STD2HNK60Z-1 3 1 3 100% avalanche tested 2 1 Gate charge minimized DPAK IPAK Very low intrinsic capacitance Zener-protected Applications D(2, TAB) Switching applications G(1) Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on- S(3) AM01476v1 tab resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status links STD2HNK60Z STD2HNK60Z-1 Product summary Order code STD2HNK60Z Marking D2HNK60Z Package DPAK Packing Tape and reel Order code STD2HNK60Z-1 Marking D2HNK60Z Package IPAK Packing Tube DS3646 - Rev 7 - October 2021 www.st.com For further information contact your local STMicroelectronics sales office.STD2HNK60Z, STD2HNK60Z-1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 600 V DS V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 2.0 C I A D Drain current (continuous) at T = 100 C 1.26 C (1) I Drain current (pulsed) 8 A DM P Total power dissipation at T = 25 C 45 W TOT C ESD Gate-source human body model (R = 1.5 k, C = 100 pF) 2 kV (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns T Storage temperature range C STG -55 to 150 T Operating junction temperature range C J 1. Pulse width limited by safe operating area. 2. I 2 A, di/dt 200 A/s, V (peak) V , V = 80% V . SD DS (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK IPAK R Thermal resistance, junction-to-case 2.77 C/W thJC R Thermal resistance, junction-to-ambient 100 C/W thJA (1) R Thermal resistance, junction-to-board 50 C/W thJB 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (t limited by T max) 2 A AR p J E Single pulse avalanche energy (starting T = 25 C, I = I V = 50 V) 120 mJ AS J D AR DD DS3646 - Rev 7 page 2/21