STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 Datasheet N-channel 800 V, 0.95 typ., 6.5 A MDmesh II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages Features TAB 3 2 Order codes V R max. I DS DS(on) D 1 DPAK TAB STD7NM80 3 STD7NM80-1 2 1 3 800 V 1.05 6.5 A 2 1 IPAK STF7NM80 TAB TO-220FP STP7NM80 3 100% avalanche tested 2 1 TO-220 Low input capacitance and gate charge Low gate input resistance D(2) Applications Switching applications G(1) Description S(3) These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs AM01475v1 noZen noTab associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status STD7NM80 STD7NM80-1 STF7NM80 STP7NM80 DS4854 - Rev 4 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD7NM80, STD7NM80-1, STF7NM80, STP7NM80 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, IPAK, TO-220FP TO-220 V Drain-source voltage 800 V DS V Gate-source voltage 30 V GS (1) I Drain current (continuous) at T = 25 C 6.5 A D C 6.5 (1) I Drain current (continuous) at T = 100 C 4 A D C 4 (2) (1) I Drain current (pulsed) 26 26 A DM P Total dissipation at T = 25 C 90 25 W TOT C Insulation withstand voltage (RMS) from all three leads to external V 2.5 kV ISO heat sink (t = 1 s T = 25 C) C T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. Table 2. Thermal data Value Symbol Parameter Unit DPAK IPAK TO-220FP TO-220 Thermal resistance R 1.4 5 1.4 C/W thj-case junction-case Thermal resistance R 100 62.5 C/W thj-amb junction-ambient Thermal resistance (1) R 50 C/W thj-pcb junction-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive I 1 A AS (pulse width limited by T ) jmax Single pulse avalanche energy E 240 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AS DD DS4854 - Rev 4 page 2/24