Product Information

STF8N60DM2

Name: STF8N60DM2
Brand: STMicroelectronics
SKU: STF8N60DM2_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STF8N60DM2 electronic component of STMicroelectronics

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Datasheet

MOSFET PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.942 ea
Line Total: USD 0.94

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 03 Jun to Thu. 06 Jun MOQ : 1 Multiples : 1 STF8N60DM2 STMicroelectronics	1 : USD 0.942 10 : USD 0.6805 30 : USD 0.511 100 : USD 0.4599 500 : USD 0.4303 1000 : USD 0.4139

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Additional Infomation About Product

The STF8N60DM2 MOSFET is a high voltage power electronic transistor manufactured by STMicroelectronics. This device is capable of blocking off voltages up to 600V, and sustaining a peak drain current of 8A. It has an low on-resistance of 1.1O which enables low voltage losses. The device also has a Total Gate Charge (Qg) of 16.4nC and a Gate Threshold Voltage (Vgs) of 2.0V, which makes it ideal for high power applications. It is suitable for use in Load Switch, H-Bridge, and other high voltage power control applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package TO - 220FP TO - 220FP
Brand Category Stmicroelectronics Stmicroelectronics
Fet Type - -
Drain To Source Voltagevdss - -
Continuous Drain Current Id @ 25°C - -
Vgsth Max @ Id - -
Rds On Max @ Id Vgs - -
Power Dissipation-Max Ta 25°C - -
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 8 A 8 A
Drain Source On Resistance Rdson@Vgs Id 550 mOhms @10V , 4A 550 mOhms @10V , 4A
Power Dissipation Pd 25 W 25 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Reverse Transfer Capacitance Crss@Vds 0.89 pF @100V 0.89 pF @100V
Type N Channel N Channel
Input Capacitance Ciss@Vds 449 pF @100V 449 pF @100V
Total Gate Charge Qg@Vgs 13.5 nC @10V 13.5 nC @10V
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)