STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 typ., 8.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 packages Datasheet production data Features R DS(on) Type V I P DSS D w max 3 2 STF10N62K3 1 (1) 1 2 8.4 A 30 W 3 TO-220FP STFI10N62K3 IPAKFP 620 V < 0.75 TAB TAB STI10N62K3 8.4 A 125 W STP10N62K3 1. Limited by package 3 3 100% avalanche tested 2 2 1 1 IPAK TO-220 Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Figure 1. Internal schematic diagram Improved diode reverse recovery characteristics 7 % Zener-protected Applications Switching applications * Description These SuperMESH3 Power MOSFETs are the result of improvements applied to STMicroelectronics SuperMESH technology, 6 combined with a new optimized vertical structure. AM01476v1 These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. Device summary Order codes Marking Package Packaging STF10N62K3 10N62K3 TO-220FP STFI10N62K3 10N62K3 IPAKFP Tube STI10N62K3 10N62K3 IPAK STP10N62K3 10N62K3 TO-220 September 2012 Doc ID 15640 Rev 4 1/17 This is information on a product in full production. www.st.com 17Contents STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 16 2/17 Doc ID 15640 Rev 4