STF13N65M2, STFI13N65M2 N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features R DS(on) Order code V I DS D max STF13N65M2 650 V 0.43 10A STFI13N65M2 Extremely low gate charge 3 2 1 2 1 3 Excellent output capacitance (C ) profile oss 2 TO-220FP I PAKFP (TO-281) 100% avalanche tested Zener-protected Applications Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking Package Packaging STF13N65M2 TO-220FP 13N65M2 Tube 2 STFI13N65M2 I PAKFP (TO-281) December 2014 DocID026893 Rev 2 1/15 www.st.comContents STF13N65M2,STFI13N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 3 Test circuits 6 4 Package mechanical data . 7 4.1 TO-220FP, STF13N65M2 8 2 4.2 I PAKFP (TO-281), STFI13N65M2 . 10 5 Revision history . 12 2/15 DocID026893 Rev 2