STFI13N80K5 STMicroelectronics

STFI13N80K5 N-channel 800 V, 0.37 typ.,12 A MDmesh K5 Power MOSFET in an IPAKFP package Datasheet - production data Features Order code V R I P DS DS(on) D TOT STFI13N80K5 800 V 0.45 12 A 35 W Fully insulated and low profile package with increased creepage path from pin to heatsink plate Industrys lowest R x area DS(on) 1 2 3 Industrys best figure of merit (FoM) 2 I PAKFP Ultra low gate charge 100% avalanche tested Figure 1. Internal schematic diagram Zener-protected D(2) Applications Switching applications Description G(1) This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on- resistance and ultra-low gate charge for applications requiring superior power density and S(3) high efficiency. AM01476v1 Table 1. Device summary Order code Marking Package Packaging STFI13N80K5 13N80K5 IPAKFP (TO-281) Tube December 2014 DocID027200 Rev 2 1/13 This is information on a product in full production. www.st.com 13Contents STFI13N80K5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 12 2/13 DocID027200 Rev 2