STFI24NM60N STMicroelectronics

STFI24NM60N N-channel 600 V, 0.168 typ., 17 A MDmesh II Power MOSFET in a IPAKFP package Datasheet production data Features Order codes V Tjmax R max. I DS DS(on) D STFI24NM60N 650 V 0.19 17 A Fully insulated and low profile package with increased creepage path from pin to heatsink plate 1 100% avalanche tested 2 3 Low input capacitance and gate charge 2 I PAKFP Low gate input resistance (TO-281) Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power * MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high 6 efficiency converters. 0 Y Table 1. Device summary Order code Marking Packages Packaging 2 STFI24NM60N 24NM60N I PAKFP (TO-281) Tube July 2014 DocID022440 Rev 3 1/12 This is information on a product in full production. www.st.comContents STFI24NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 DocID022440 Rev 3