STF34N65M5, STFI34N65M5 N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs 2 2 in TO-220FP, I PAKFP, I PAK packages Datasheet - production data Features Order codes V T R max I DS Jmax DS(on) D STF34N65M5 710 V 0.11 28 A STFI34N65M5 Worldwide best R * area DS(on) 3 Higher V rating and high dv/dt capability DSS 2 1 Excellent switching performance 2 TO-220FP I PAKFP(TO-281) 100% avalanche tested Applications Figure 1. Internal schematic diagram Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known * PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially 6 suitable for applications which require superior power density and outstanding efficiency. 0 Y Table 1. Device summary Order codes Marking Packages Packaging STF34N65M5 TO-220FP 34N65M5 Tube 2 STFI34N65M5 I PAKFP (TO-281) January 2014 DocID025778 Rev 1 1/15 This is information on a product in full production. www.st.comContents STF34N65M5, STFI34N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 14 2/15 DocID025778 Rev 1