Product Information

STFI15N60M2-EP

STFI15N60M2-EP electronic component of STMicroelectronics

Datasheet
N-Channel 600 V 11A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)
Manufacturer: STMicroelectronics
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Price (USD)

12: USD 0.5909 ea
Line Total: USD 7.09

1387 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 12  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1387 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 12
Multiples : 1

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STFI15N60M2-EP
STMicroelectronics

12 : USD 0.6144

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STFI15N60M2-EP Datasheet N-channel 600 V, 0.340 typ., 11 A MDmesh M2 EP Power MOSFET in an IPAKFP package Features Order code V T R max. I DS Jmax DS(on) D STFI15N60M2-EP 650 V 0.378 11 A Fully insulated and low profile package with increased creepage path from pin to heatsink plate 1 2 3 Extremely low gate charge 2 I PAKFP (TO-281) Excellent output capacitance (C ) profile OSS 100% avalanche tested D(2) Zener-protected Applications G(1) Switching applications Tailored for very high frequency converters (f > 150 kHz) Description S(3) AM01476v1 This device is an N-channel Power MOSFET developed using MDmesh M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status STFI15N60M2-EP Product summary Order code STFI15N60M2-EP Marking 15N60M2EP Package IPAKFP (TO-281) Packing Tube DS12491 - Rev 2 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STFI15N60M2-EP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 11 A D C (1) I Drain current (continuous) at T = 100 C 7 A C D (2) I Drain current (pulsed) 44 A DM P Total dissipation at T = 25 C 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink V 2500 V ISO (t = 1 s,T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 11 A, di/dt 400 A/s, V < V , V = 400 V SD DS peak (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 2.8 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 125 mJ AS j D AR DD DS12491 - Rev 2 page 2/13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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