STFI15N60M2-EP Datasheet N-channel 600 V, 0.340 typ., 11 A MDmesh M2 EP Power MOSFET in an IPAKFP package Features Order code V T R max. I DS Jmax DS(on) D STFI15N60M2-EP 650 V 0.378 11 A Fully insulated and low profile package with increased creepage path from pin to heatsink plate 1 2 3 Extremely low gate charge 2 I PAKFP (TO-281) Excellent output capacitance (C ) profile OSS 100% avalanche tested D(2) Zener-protected Applications G(1) Switching applications Tailored for very high frequency converters (f > 150 kHz) Description S(3) AM01476v1 This device is an N-channel Power MOSFET developed using MDmesh M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status STFI15N60M2-EP Product summary Order code STFI15N60M2-EP Marking 15N60M2EP Package IPAKFP (TO-281) Packing Tube DS12491 - Rev 2 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.STFI15N60M2-EP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS (1) I Drain current (continuous) at T = 25 C 11 A D C (1) I Drain current (continuous) at T = 100 C 7 A C D (2) I Drain current (pulsed) 44 A DM P Total dissipation at T = 25 C 25 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink V 2500 V ISO (t = 1 s,T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 11 A, di/dt 400 A/s, V < V , V = 400 V SD DS peak (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 5 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 2.8 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 125 mJ AS j D AR DD DS12491 - Rev 2 page 2/13