STGB10NB37LZT4 STMicroelectronics

STGB10NB37LZT4 electronic component of STMicroelectronics
STGB10NB37LZT4 STMicroelectronics
STGB10NB37LZT4 IGBT Transistors
STGB10NB37LZT4  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of STGB10NB37LZT4 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGB10NB37LZT4 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. STGB10NB37LZT4
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: STMicroelectronics IGBT Transistors 10 A - 410 V Int Clamped IGBT
Datasheet: STGB10NB37LZT4 Datasheet (PDF)
Price (USD)
1: USD 5.544 ea
Line Total: USD 5.54 
Availability : 1232
  
Ship by Fri. 08 Aug to Tue. 12 Aug
QtyUnit Price
1$ 5.544
10$ 3.682
12$ 1.666
31$ 1.582

Availability 1232
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 5.544
10$ 3.682
12$ 1.666
31$ 1.582

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
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Minimum Operating Temperature
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Series
Continuous Collector Current Ic Max
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We are delighted to provide the STGB10NB37LZT4 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGB10NB37LZT4 and other electronic components in the IGBT Transistors category and beyond.

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STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop TAB TAB Low gate charge High current capability 3 High voltage clamping feature 3 1 2 1 TO-220 DPAK Applications Automotive ignition Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal schematic diagram between switching performance and low on-state C (2,TAB) behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gate- emitter Zener supplies an ESD protection. G (1) E (3) SC090150 Table 1. Device summary Order codes Marking Package Packaging STGB10NB37LZ GB10NB37LZ DPAK Tube STGB10NB37LZT4 GB10NB37LZ DPAK Tape and reel STGP10NB37LZ GP10NB37LZ TO-220 Tube November 2009 Doc ID 7402 Rev 4 1/15 www.st.com 15Contents STGB10NB37LZ, STGP10NB37LZ Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits . 9 4 Package mechanical data 10 5 Packaging mechanical data 13 6 Revision history . 14 2/15 Doc ID 7402 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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