Product Information

STGB10NB40LZT4

STGB10NB40LZT4 electronic component of STMicroelectronics

Datasheet
IGBT Transistors N-Ch Clamped 20 Amp

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.7164 ea
Line Total: USD 7.72

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1000
Multiples : 1000

Stock Image

STGB10NB40LZT4
STMicroelectronics

1000 : USD 1.8366
2000 : USD 1.7796

0 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STGB10NB40LZT4
STMicroelectronics

1 : USD 2.3574
10 : USD 1.9913
100 : USD 1.9514
500 : USD 1.8764
1000 : USD 1.8764

0 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1000
Multiples : 1000

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STGB10NB40LZT4
STMicroelectronics

1000 : USD 1.7955
2000 : USD 1.6625
3000 : USD 1.6625

0 - WHS 4


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

STGB10NB40LZT4
STMicroelectronics

1 : USD 7.7164
10 : USD 2.7746
25 : USD 2.6186
100 : USD 2.2286
500 : USD 1.8386
1000 : USD 1.5711

0 - WHS 5


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 6
Multiples : 1

Stock Image

STGB10NB40LZT4
STMicroelectronics

6 : USD 2.3574
10 : USD 1.9913
100 : USD 1.9514

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Qualification
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STGB10NB40LZT4 Automotive-grade 10 A, 410 V internally clamped IGBT Datasheet - production data Features Order code V V CES CE(sat)max. IC TAB STGB10NB40LZT4 Clamped 1.8 V 20 A 2 AEC-Q101 qualified 3 Low threshold voltage 1 Low on-voltage drop Low gate charge D PAK High current capability High voltage clamping feature Applications Figure 1: Internal schematic diagram Switching applications C (2,TAB) Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, PowerMESH with an overall outstanding G (1) performance. The built-in collector-gate Zener RGE exhibits a very precise active clamping while the gate-emitter Zener supplies the ESD protection. E (3) IGBTG1C2TABE32Zener Table 1: Device summary Order code Marking Package Packing STGB10NB40LZT4 GB10NB40LZ DPAK Tape and reel March 2017 DocID030391 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STGB10NB40LZT4 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 DPAK (TO-263) type A package information ................................. 10 4.2 Packing information ......................................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID030391 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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