Product Information

STGB15M65DF2

STGB15M65DF2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1111 ea
Line Total: USD 1.11

124 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STGB15M65DF2
STMicroelectronics

1 : USD 1.1895
10 : USD 1.1402
100 : USD 1.1175
500 : USD 1.1175
1000 : USD 1.1175

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STGB15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a DPAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) I = 15 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat) 3 Low thermal resistance 1 Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C D PAK Applications Motor control UPS Figure 1: Internal schematic diagram PFC General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGB15M65DF2 G15M65DF2 DPAK Tape and reel May 2017 DocID025356 Rev 4 1/19 www.st.com This is information on a product in full production. Contents STGB15M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 DPAK (TO-263) type A package information ................................. 13 4.2 DPAK type A packing information .................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID025356 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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