Product Information

STGB10M65DF2

STGB10M65DF2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.4839 ea
Line Total: USD 4.48

9 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

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9 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STGB10M65DF2
STMicroelectronics

1 : USD 4.5785
10 : USD 3.7699
30 : USD 3.0864
100 : USD 2.6718
500 : USD 2.5398
1000 : USD 2.4806

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Cnhts
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Additional Infomation About Product

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in DPAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) I = 10 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat) 3 Low thermal resistance 1 Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C D PAK Applications Motor control UPS Figure 1: Internal schematic diagram PFC General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGB10M65DF2 G10M65DF2 DPAK Tape and reel April 2017 DocID027429 Rev 6 1/19 www.st.com This is information on a product in full production. Contents STGB10M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 DPAK package information ............................................................ 13 2 4.2 D PAK packing information ............................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID027429 Rev 6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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