STGB10M65DF2 STMicroelectronics

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in DPAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) I = 10 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat) 3 Low thermal resistance 1 Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C D PAK Applications Motor control UPS Figure 1: Internal schematic diagram PFC General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGB10M65DF2 G10M65DF2 DPAK Tape and reel April 2017 DocID027429 Rev 6 1/19 www.st.com This is information on a product in full production. Contents STGB10M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 DPAK package information ............................................................ 13 2 4.2 D PAK packing information ............................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID027429 Rev 6