Product Information

STGB20N40LZ

STGB20N40LZ electronic component of STMicroelectronics

Datasheet
IGBT Transistors 390V IGBT EAS 300mJ Internally Clamped
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 1.2306 ea
Line Total: USD 8.61

0 - Global Stock
MOQ: 7  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 1000
Multiples : 1000

Stock Image

STGB20N40LZ
STMicroelectronics

1000 : USD 1.7664
2000 : USD 1.6356
3000 : USD 1.6356

0 - WHS 2


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

STGB20N40LZ
STMicroelectronics

1 : USD 7.6118
10 : USD 2.734
25 : USD 2.5787

0 - WHS 3


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 7
Multiples : 1

Stock Image

STGB20N40LZ
STMicroelectronics

7 : USD 1.2306

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Gate-Emitter Leakage Current
Power Dissipation
Qualification
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STGB20N40LZ, STGD20N40LZ Automotive-grade 390 V internally clamped IGBT E 300 mJ SCIS Datasheet - production data Features Designed for automotive applications and AEC-Q101 qualified TAB ESD gate-emitter protection TAB Gate-collector high voltage clamping 3 1 3 Logic level gate drive 1 Low saturation voltage DPAK 2 D PAK High pulsed current capability Gate and gate-emitter resistor Applications Pencil coil electronic ignition driver Figure 1. Internal schematic diagram C (2 or TAB) Description This application-specific IGBT utilizes the most advanced PowerMESH technology. The built-in Zener diodes between gate-collector and gate- emitter provide overvoltage protection R capabilities. The device also exhibits low on-state G G (1) voltage drop and low threshold drive for use in automotive ignition systems. R GE E (3) SC30180 Table 1. Device summary Order codes Marking Packages Packaging 2 STGB20N40LZ GB20N40LZ D PAK Tape and reel STGD20N40LZ GD20N40LZ DPAK Tape and reel June 2014 DocID024251 Rev 5 1/20 This is information on a product in full production. www.st.comContents STGB20N40LZ, STGD20N40LZ Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 9 4 Package mechanical data 10 5 Packaging mechanical data 16 6 Revision history . 19 2/20 DocID024251 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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