Product Information

STGB6M65DF2

STGB6M65DF2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.3808 ea
Line Total: USD 4.38

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

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STGB6M65DF2
STMicroelectronics

1 : USD 4.3808
10 : USD 1.5814
25 : USD 1.4959

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

STGB6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Features 6 s of short-circuit withstand time TAB VCE(sat) = 1.55 V (typ.) IC = 6 A Tight parameter distribution Safer paralleling 2 Low thermal resistance 3 Soft and very fast recovery antiparallel diode 1 Applications D PAK Motor control UPS PFC Figure 1: Internal schematic diagram Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGB6M65DF2 G6M65DF2 DPAK Tape and reel August 2016 DocID028704 Rev 3 1/19 www.st.com This is information on a product in full production. Contents STGB6M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 7 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 DPAK (TO-263) type A package information ................................. 13 4.2 DPAK packing information ............................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID028704 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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