Product Information

STGD10HF60KD

STGD10HF60KD electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 1.1929 ea
Line Total: USD 2982.25

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 2500
Multiples : 2500

Stock Image

STGD10HF60KD
STMicroelectronics

2500 : USD 1.1609
5000 : USD 1.15
10000 : USD 1.1391
15000 : USD 1.1345

0 - WHS 2


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

STGD10HF60KD
STMicroelectronics

1 : USD 2.2138
10 : USD 1.9262
25 : USD 1.7237
100 : USD 1.4787
250 : USD 1.4491
500 : USD 1.3934
1000 : USD 1.3934

0 - WHS 3


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 2500
Multiples : 2500

Stock Image

STGD10HF60KD
STMicroelectronics

2500 : USD 1.3125

0 - WHS 4


Ships to you between Tue. 14 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

STGD10HF60KD
STMicroelectronics

1 : USD 6.1101
10 : USD 2.2059
25 : USD 2.0816

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Qualification
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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STGD10HF60KD Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode Datasheet - production data Features Designed for automotive applications and AEC-Q101 qualified TAB Low on-voltage drop (V ) CE(sat) 3 Low C / C ratio (no cross conduction res ies 1 susceptibility) Switching losses include diode recovery energy DPAK Short-circuit rated Very soft Ultrafast recovery anti-parallel diode Applications High frequency inverters Figure 1. Internal schematic diagram SMPS and PFC in both hard switch and resonant topologies Motor drives Injection systems Description This device utilizes the advanced PowerMESH process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies. Table 1. Device summary Order code Marking Package Packaging STGD10HF60KD GD10HF60KD DPAK Tape and reel September 2015 DocID022874 Rev 3 1/21 This is information on a product in full production. www.st.comContents STGD10HF60KD Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 7 3 Test circuits 13 4 Package mechanical data 14 5 Packaging mechanical data 18 6 Revision history . 20 2/21 DocID022874 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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