STGD10NC60HT4 STMicroelectronics

STGD10NC60HT4 Datasheet N-channel 600 V, 10 A, very fast IGBT in DPAK package Features I TAB C V V Type CES CE(sat) max. 100C 3 2 STGD10NC60HT4 600 V 2.5 V 10 A 1 DPAK Low on-voltage drop (V ) CE(sat) Low CRES / CIES ratio (no cross-conduction susceptibility) C(2, TAB) Applications High-frequency motor controls SMPS and PFC in both hard switch and resonant topologies G(1) Description This device is a very fast IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications. E(3) G1C2TE3 Product status link STGD10NC60HT4 Product summary Order code STGD10NC60HT4 Marking GD10NC60H Package DPAK Packing Tape and reel DS12871 - Rev 1 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGD10NC60HT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE I Continuous collector current at T = 25 C 20 A C C I Collector current (continuous) at T = 100C 10 A C C (1) I Collector current (pulsed) 40 A CL V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 60 W TOT C T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. V = 480 V, T = 150C, R = 10 , V = 15 V clamp j G GE Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.08 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb DS12871 - Rev 1 page 2/19