Product Information

STGP20V60F

STGP20V60F electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

36: USD 0.91 ea
Line Total: USD 32.76

339 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 36  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
339 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 36
Multiples : 1

Stock Image

STGP20V60F
STMicroelectronics

36 : USD 0.91
50 : USD 0.91
200 : USD 0.91
750 : USD 0.91
2500 : USD 0.91

291 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 50
Multiples : 50

Stock Image

STGP20V60F
STMicroelectronics

50 : USD 2.1086
500 : USD 2.0052
1000 : USD 1.8986
2000 : USD 1.7952
2500 : USD 1.7593

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STGB20V60F, STGP20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature: T = 175 C J Very high speed switching series TAB TAB Tail-less switching off Low saturation voltage: V = 1.8 V (typ.) CE(sat) I = 20 A C 3 3 Tight parameters distribution 2 1 1 Safe paralleling 2 D PAK TO-220 Low thermal resistance Lead free package Applications Figure 1. Internal schematic diagram Photovoltaic inverters C (2, TAB) Uninterruptible power supply Welding Power factor correction Very high frequency converters G (1) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging 2 STGB20V60F GB20V60F D PAK Tape and reel STGP20V60F GP20V60F TO-220 Tube July 2013 DocID024890 Rev 1 1/18 This is information on a product in full production. www.st.com 18Contents STGB20V60F, STGP20V60F Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 10 4 Package mechanical data 11 5 Packaging mechanical data 15 6 Revision history . 17 2/18 DocID024890 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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