Product Information

STGW15H120F2

STGW15H120F2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.2752 ea
Line Total: USD 7.28

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 600
Multiples : 1

Stock Image

STGW15H120F2
STMicroelectronics

600 : USD 2.0163
1000 : USD 1.815

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STGW15H120F2
STMicroelectronics

1 : USD 7.2752
10 : USD 2.6201
25 : USD 2.4751
100 : USD 2.1437
500 : USD 1.8227
1000 : USD 1.657

0 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 7
Multiples : 1

Stock Image

STGW15H120F2
STMicroelectronics

7 : USD 5.0521

     
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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STGW15H120F2, STGWA15H120F2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) I = 15 A CE(sat) C 5 s minimum short-circuit withstand time at T =150 C J Safe paralleling 2 7 2 ORQJ OHDGV 7 Low thermal resistance Applications Figure 1. Internal schematic diagram Uninterruptible power supply Welding machines & Photovoltaic inverters Power factor correction High frequency converters * Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved 6& ( H series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of high frequency converters. Furthermore, a slightly positive V temperature coefficient and very tight CE(sat) parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packing STGW15H120F2 G15H120F2 TO-247 Tube STGWA15H120F2 G15H120F2 TO-247 long leads Tube April 2015 DocID026013 Rev 5 1/17 This is information on a product in full production. www.st.com 17Contents STGW15H120F2, STGWA15H120F2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package information 12 4.1 TO-247 package information 12 4.2 TO-247 long leads, package information . 14 5 Revision history . 16 2/17 DocID026013 Rev 5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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