Product Information

STGP30H65F

STGP30H65F electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gte FieldStop IGBT 600V 30A
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0747 ea
Line Total: USD 0.07

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

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STGP30H65F
STMicroelectronics

1 : USD 0.0747

0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 10
Multiples : 10

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STGP30H65F
STMicroelectronics

10 : USD 2.3363
300 : USD 2.0977

0 - WHS 3


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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STGP30H65F
STMicroelectronics

1 : USD 7.1055
10 : USD 2.5644
25 : USD 2.4469
100 : USD 2.1583
500 : USD 1.8912
1000 : USD 1.731

0 - WHS 4


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 5
Multiples : 1

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STGP30H65F
STMicroelectronics

5 : USD 0

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STGP30H65F Trench gate field-stop IGBT, H series 650 V, 30 A high speed Datasheet - production data Features High speed switching Tight parameters distribution TAB Safe paralleling Low thermal resistance Short-circuit rated 3 2 1 Applications TO-220 Inverter UPS PFC Description Figure 1. Internal schematic diagram This device is an IGBT developed using an advanced proprietary trench gate and field stop C (2, TAB) structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive G (1) V temperature coefficient and very tight CE(sat) parameter distribution result in easier paralleling operation. E (3) Table 1. Device summary Order codes Marking Package Packaging STGP30H65F GP30H65F TO-220 Tube December 2013 DocID025631 Rev 1 1/13 This is information on a product in full production. www.st.com 13Contents STGP30H65F Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits . 9 4 Package mechanical data 10 5 Revision history . 12 2/13 DocID025631 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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