STGB5H60DF, STGD5H60DF STGF5H60DF, STGP5H60DF Datasheet Trench gate field-stop 600 V, 5 A high speed H series IGBT Features TAB TAB High-speed switching 2 3 3 1 1 2 DPAK Tight parameter distribution D PAK Safe paralleling TAB Low thermal resistance Short-circuit rated 3 2 3 1 Ultrafast soft recovery antiparallel diode 2 1 TO-220 TO-220FP Applications C(2, TAB) Motor control UPS PFC G(1) Description These devices are IGBTs developed using an advanced proprietary trench gate field- E(3) stop structure. These devices are part of the H series of IGBTs, which represents an NG1E3C2T optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGB5H60DF STGD5H60DF STGF5H60DF STGP5H60DF DS10745 - Rev 5 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK, TO-220 DPAK TO-220FP V Collector-emitter voltage (V = 0) 600 V CES GE (1) Continuous collector current at T = 25 C 10 C 10 I A C (1) Continuous collector current at T = 100 C 5 C 5 (2) (1) I Pulsed collector current 20 20 A CP V Gate-emitter voltage 20 V GE (1) Continuous forward current T = 25 C 10 10 C I A F (1) Continuous forward current at T = 100 C 5 5 C (2) (1) I Pulsed forward current 20 A 20 FP Insulation withstand voltage (RMS) from all three leads to external heat sink V 2500 V ISO (t = 1 s T = 25 C) c P Total power dissipation at T = 25 C 88 83 24 W TOT C T Storage temperature range -55 to 150 STG C T Operating junction temperature range -55 to 175 J 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit 2 DPAK TO-220FP D PAK, TO-220 R Thermal resistance junction-case IGBT 1.7 1.8 6.2 C/W thJC R Thermal resistance junction-case diode 4 4.5 7 C/W thJC R Thermal resistance junction-ambient 62.5 100 62.5 C/W thJA DS10745 - Rev 5 page 2/31