Product Information

STGW20H60DF

STGW20H60DF electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

30: USD 1.3621 ea
Line Total: USD 40.86

0 - Global Stock
MOQ: 30  Multiples: 30
Pack Size: 30

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1200
Multiples : 1

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STGW20H60DF
STMicroelectronics

1200 : USD 2.0059
2000 : USD 1.9877
2500 : USD 1.9695
3000 : USD 1.9512
4000 : USD 1.9328
5000 : USD 1.9145
6000 : USD 1.8962
10000 : USD 1.8778
20000 : USD 1.8594
50000 : USD 1.8409

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STGW20H60DF
STMicroelectronics

1 : USD 4.1769
10 : USD 3.2025
100 : USD 2.442
500 : USD 2.2425
1000 : USD 2.1287

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 30
Multiples : 30

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STGW20H60DF
STMicroelectronics

30 : USD 1.3621
120 : USD 1.2612
450 : USD 1.2108
1200 : USD 1.2108
3000 : USD 1.2108

0 - WHS 4


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

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STGW20H60DF
STMicroelectronics

1 : USD 4.6819
10 : USD 3.8656
30 : USD 3.2728
100 : USD 2.783
500 : USD 2.7002
1000 : USD 2.6599

0 - WHS 5


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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STGW20H60DF
STMicroelectronics

1 : USD 8.4144
10 : USD 3.0345
25 : USD 2.8636

0 - WHS 6


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 30
Multiples : 30

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STGW20H60DF
STMicroelectronics

30 : USD 3.5132

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features High speed switching TAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated 3 3 2 2 Ultrafast soft recovery antiparallel diode 1 1 TO-247 TO-3P Applications Motor control UPS, PFC Figure 1. Internal schematic diagram Description This device is an IGBT developed using an C (2, TAB) advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive G (1) V temperature coefficient and very tight CE(sat) parameter distribution result in easier paralleling operation. E (3) Table 1. Device summary Order codes Marking Packages Packaging STGW20H60DF GW20H60DF TO-247 Tube STGWT20H60DF GWT20H60DF TO-3P Tube June 2013 DocID024745 Rev 1 1/17 This is information on a product in full production. www.st.com 17Contents STGW20H60DF, STGWT20H60DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 7 3 Test circuits 11 4 Package mechanical data 12 5 Revision history . 16 2/17 DocID024745 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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