STGW20H60DF STMicroelectronics

STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features High speed switching TAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated 3 3 2 2 Ultrafast soft recovery antiparallel diode 1 1 TO-247 TO-3P Applications Motor control UPS, PFC Figure 1. Internal schematic diagram Description This device is an IGBT developed using an C (2, TAB) advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive G (1) V temperature coefficient and very tight CE(sat) parameter distribution result in easier paralleling operation. E (3) Table 1. Device summary Order codes Marking Packages Packaging STGW20H60DF GW20H60DF TO-247 Tube STGWT20H60DF GWT20H60DF TO-3P Tube June 2013 DocID024745 Rev 1 1/17 This is information on a product in full production. www.st.com 17Contents STGW20H60DF, STGWT20H60DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 7 3 Test circuits 11 4 Package mechanical data 12 5 Revision history . 16 2/17 DocID024745 Rev 1