STH180N10F3-2 STMicroelectronics

STH180N10F3-2 N-channel 100 V, 3.9 m typ.,180 A, STripFET F3 Power MOSFET in HPAK-2 package Datasheet - production data Features R DS(on) Order code V I DS D max. STH180N10F3-2 100 V 4.5 m 180 A Ultra low on-resistence 100% avalanche tested Applications Figure 1: Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Table 1: Device summary Order code Marking Package Packing Tape 2 STH180N10F3-2 180N10F3 H PAK-2 and reel S(2,3) November 2014 DocID019060 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STH180N10F3-2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 2 4.1 H PAK-2 package information ......................................................... 10 4.2 Packing information ......................................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID019060 Rev 2