Product Information

STH185N10F3-6

Name: STH185N10F3-6
Brand: STMicroelectronics
SKU: STH185N10F36_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STH185N10F3-6 electronic component of STMicroelectronics

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Datasheet

STMicroelectronics MOSFET

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1000 Multiples : 1000 STH185N10F3-6 STMicroelectronics	1000 : USD 1.8537 10000 : USD 1.7746 100000 : USD 1.7391	N/A Obsolete

0 - WHS 2 MOQ : 1 Multiples : 1 STH185N10F3-6 STMicroelectronics	1 : USD 6.4363 10 : USD 3.9354 25 : USD 3.5522 100 : USD 2.8376 500 : USD 2.5269 1000 : USD 2.1955 5000 : USD 2.0919 10000 : USD 2.0298 25000 : USD 1.9366	N/A Obsolete

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Additional Infomation About Product

STH185N10F3-6 Automotive-grade N-channel 100 V, 180 A, 3.9 m typ., 2 STripFET F3 Power MOSFET in an H PAK-6 package Datasheet - production data Features V R max. I Order code DS DS(on) D TAB STH185N10F3-6 100 V 4.5 m 180 A 7 AEC-Q101 qualified 1 Ultra low on-resistance 2 H PAK-6 100% avalanche tested Applications Switching applications Figure 1. Internal schematic diagram Description % 7 This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. * 6 0 Y Table 1. Device summary Order code Marking Packages Packing 2 STH185N10F3-6 185N10F3 Tape and reel H PAK-6 October 2016 DocID027293 Rev 2 1/16 This is information on a product in full production. www.st.comContents STH185N10F3-6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package information . 9 4.1 HPAK-6 package information . 10 4.2 HPAK-6 packing information 13 5 Revision history . 15 2/16 DocID027293 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 180 A 180 A
Vds - Drain-Source Breakdown Voltage 100 V 100 V
Rds On - Drain-Source Resistance 3.9 mOhms 3.9 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2 V 2 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 315 W 315 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 263 - 7 TO - 263 - 7
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 114.6 nC 114.6 nC
Channel Mode Enhancement Enhancement
Qualification Aec - Q101 Aec - Q101
Tradename Stripfet Stripfet
Series N - Channel Stripfet N - Channel Stripfet
Brand Stmicroelectronics Stmicroelectronics
Configuration Single Single
Height 4.8 mm 4.8 mm
Length 15.8 mm 15.8 mm
Transistor Type 1 N - Channel 1 N - Channel
Width 10.4 mm 10.4 mm
Cnhts 8541290000 8541290000
Fall Time 6.9 ns 6.9 ns
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Rise Time 97.1 ns 97.1 ns
Factory Pack Quantity : 1000 1000
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-Off Delay Time 99.9 ns 99.9 ns
Typical Turn-On Delay Time 25.6 ns 25.6 ns