Product Information

STH270N8F7-6

STH270N8F7-6 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-CH 80V 17mOhm 180A STripFET VII

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.7386 ea
Line Total: USD 5.74

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
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0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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STH270N8F7-6
STMicroelectronics

1 : USD 10.9658
10 : USD 9.4875
100 : USD 7.7745
500 : USD 6.6182

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

STH270N8F7-6
STMicroelectronics

1 : USD 10.9658
10 : USD 9.4875
100 : USD 7.7745
500 : USD 6.6182

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1000
Multiples : 1000

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STH270N8F7-6
STMicroelectronics

1000 : USD 6.8259

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1000
Multiples : 1000

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STH270N8F7-6
STMicroelectronics

1000 : USD 3.5982

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1000
Multiples : 1000

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STH270N8F7-6
STMicroelectronics

1000 : USD 3.3408

0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

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STH270N8F7-6
STMicroelectronics

1 : USD 5.7386
10 : USD 3.7593
25 : USD 3.5522
100 : USD 3.0861
500 : USD 2.6304
1000 : USD 2.2887

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 6
Multiples : 1

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STH270N8F7-6
STMicroelectronics

6 : USD 5.9712

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STH270N8F7-2, STH270N8F7-6, STP270N8F7 Datasheet N-channel 80 V, 0.0017 typ., 180 A STripFET F7 Power MOSFETs in an HPAK-2, HPAK-6 and TO-220 packages TAB Features TAB 7 V R max. I Order codes DS DS(on) D 2 3 1 1 2 2 H PAK-2 H PAK-6 STH270N8F7-2 0.0021 TAB STH270N8F7-6 80 V 180 A STP270N8F7 0.0025 3 2 1 Among the lowest R on the market DS(on) TO-220 Excellent FoM (figure of merit) Low C /C ratio for EMI immunity rss iss D(TAB) D(2, TAB) High avalanche ruggedness G(1) G(1) Applications Switching applications S(2, 3, 4, 5, 6, 7) S(3) Description 2 2 TO-220 H PAK-2, H PAK-6 These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. H2PAK 2 6 N-CHG1DTABS234567 TO-220 N-CHG1D2TABS3 Product status links STH270N8F7-2 STH270N8F7-6 STP270N8F7 DS9394 - Rev 5 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STH270N8F7-2, STH270N8F7-6, STP270N8F7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 80 V DS V Gate-source voltage 20 V GS (1) I Drain current (continuous) at T = 25 C 180 A C D (1) Drain current (continuous) at T = 100 C I 180 A D c (2) I Drain current (pulsed) 720 A DM (3) Total power dissipation at T = 25 C P 315 W TOT C (4) E Single pulse avalanche energy 1.16 J AS T Operating junction temperature range j -55 to 175 C T Storage temperature range stg 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. This value is rated according to R thJC 4. Starting T =25 C, I =65 A, V =50 V j D DD Table 2. Thermal data Value Symbol Parameter Unit HPAK-2, HPAK-6 TO-220 Thermal resistance, R C/W thJC 0.48 junction-to-case Thermal resistance, (1) R 35 C/W thJB junction-to-board Thermal resistance, R 62.5 C/W thJA junction-to-ambient 1. When mounted on an 1 inch FR-4, 2 Oz copper board. DS9394 - Rev 5 page 2/21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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