STH320N4F6-2, STH320N4F6-6 Automotive-grade N-channel 40 V, 1.1 m typ., 200 A STripFET F6 Power MOSFETs in HPAK-2 and HPAK-6 Datasheet - production data Features Order code V R max I DS DS(on) D TAB STH320N4F6-2 TAB 40 V 1.3 m 200 A STH320N4F6-6 7 2 3 1 AEC-Q101 qualified 1 2 H PAK-2 2 Very low on-resistance H PAK-6 Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Figure 1: Internal schematic diagram Switching applications D(TAB) D(TAB) Description These devices are N-channel Power MOSFETs developed using the STripFET F6 technology with a new trench gate structure. The resulting G(1) G(1) Power MOSFETs exhibit very low RDS(on) in all packages. S(2, 3) S(2, 3, 4, 5, 6, 7) for for 2 2 H PAK-2 H PAK-6 N-CHG1DTABS23 2 6 Table 1: Device summary Order code Marking Package Packaging STH320N4F6-2 HPAK-2 320N4F6 Tape and reel STH320N4F6-6 HPAK-6 May 2017 DocID024221 Rev 3 1/18 www.st.com This is information on a product in full production. Contents STH320N4F6-2, STH320N4F6-6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 HPAK-2 mechanical data ............................................................... 10 4.2 HPAK-6 mechanical data ............................................................... 12 4.3 Packaging information ..................................................................... 15 5 Revision history ............................................................................ 17 2/18 DocID024221 Rev 3