STH2N120K5-2AG Datasheet Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an HPAK-2 package Features TAB V R max. I P Order code DS DS(on) D TOT STH2N120K5-2AG 1200 V 10 1.5 A 60 W 2 3 1 AEC-Q101 qualified Industrys lowest R x area 2 DS(on) H PAK-2 Industrys best FoM (figure of merit) Ultra-low gate charge D(TAB) 100% avalanche tested Applications Switching applications G(1) Description S(2, 3) This very high voltage N-channel Power MOSFET is designed using MDmesh K5 DTG1S23NZ technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status STH2N120K5-2AG (1) Product summary Order code STH2N120K5-2AG Marking 2N120K5 Package HPAK-2 Packing Tape and reel 1. HTRB test was performed at 80% of V according to AEC-Q101 rev. (BR)DSS C. All other tests were performed according to AEC-Q101 rev. D. DS12486 - Rev 5 - June 2020 www.st.com For further information contact your local STMicroelectronics sales office.STH2N120K5-2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 1.5 C I A D Drain current (continuous) at T = 100 C 1 C (1) I Drain current (pulsed) 2.5 A DM P Total power dissipation at T = 25 C 60 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. I 1.5 A, di/dt = 100 A/s, V (peak) < V , V = 80% V . SD DS (BR)DSS DD (BR)DSS 3. V 960 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.08 thj-case C/W (1) R Thermal resistance junction-pcb 30 thj-pcb 1. When mounted on an 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 0.5 A AR (2) E Single pulse avalanche energy 80 mJ AS 1. Pulse width is limited by T max. J 2. Starting T = 25 C, I = I , V = 50 V. J D AR DD DS12486 - Rev 5 page 2/14