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STI18N60M2

STI18N60M2 electronic component of STMicroelectronics

Datasheet
MOSFET POWER MOSFET

Manufacturer: STMicroelectronics
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Price (USD)

1: USD 4.4532 ea
Line Total: USD 4.4532

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
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0 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

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STI18N60M2
STMicroelectronics

1 : USD 4.4532
10 : USD 1.6052
25 : USD 1.5327
100 : USD 1.3153
500 : USD 1.1184
1000 : USD 0.9476

     
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STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet 2 N-channel 600 V, 0.255 typ., 13 A MDmesh M2 Power MOSFETs in D PAK, 2 I PAK, TO-220 and TO-247 packages TAB Features TAB V T R max. I Order codes Package DS Jmax DS(on) D STB18N60M2 DPAK 3 3 2 1 STI18N60M2 IPAK 1 2 650 V 0.280 13 A 2 I PAK D PAK STP18N60M2 TO-220 STW18N60M2 TO-247 TAB Extremely low gate charge Excellent output capacitance (C ) profile OSS 3 100% avalanche tested 3 2 2 1 1 Zener-protected TO-247 TO-220 ( D 2, TAB) Application Switching applications LLC converters, resonant converters ( ) G 1 Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices S ( 3 ) AM15572V1 exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STB18N60M2 STI18N60M2 STP18N60M2 STW18N60M2 DS9714 - Rev 4 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 13 A D C I Drain current (continuous) at T = 100 C 8 A D C (1) I Drain current (pulsed) 52 A DM P Total power dissipation at T = 25 C 110 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Storage temperature range stg - 55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 13 A, di/dt 400 A/s V < V , V = 400 V. SD DS peak (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Value 2 Symbol Parameter Unit I PAK 2 TO-247 D PAK TO-220 R Thermal resistance junction-case 1.14 C/W thj-case R Thermal resistance junction-ambient 62.5 50 C/W thj-amb (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 3 A AR jmax E Single pulse avalanche energy (starting T = 25C, I = I V = 50 V) 135 mJ AS j D AR DD DS9714 - Rev 4 page 2/27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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