DMN3032LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 30m V = 10V 6.2A GS Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 42m V = 4.5V 5.2A GS Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMN3032LFDBQ) Description and Applications This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Case: U-DFN2020-6 (Type B) Case Material: Molded Plastic, Green Molding Compound. Body Control Electronics UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish NiPdAu Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 e4 Terminals Connections: See Diagram Below Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type B) D1 D2 S2 G2 D2 D1 G1 G2 D1 D2 G1 S1 S2 S1 Pin1 Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN3032LFDB-7 U-DFN2020-6 (Type B) 3,000/Tape & Reel DMN3032LFDB-13 U-DFN2020-6 (Type B) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN3032LFDB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 6.2 A Continuous Drain Current (Note 6) V = 10V I A GS D State 5.0 T = +75C A Maximum Continuous Body Diode Forward Current (Note 6) 2 A I S Pulsed Body Diode Forward Current (370s Pulse, Duty Cycle = 1%) 20 A I SM 25 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I DM Avalanche Current (Note 7) L = 0.1mH 12 A I AS Avalanche Energy (Note 7) L = 0.1mH E 10 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.0 W D Steady state 127 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 75 Total Power Dissipation (Note 6) P 1.7 W D Steady state 72 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 43 C/W Thermal Resistance, Junction to Case (Note 6) 9 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I - - 1.0 A V = 30V, V = 0V J DSS DS GS Zero Gate Voltage Drain Current T = +150C (Note 9) - - 100 A J IDSS VDS = 30V, VGS = 0V Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1.0 1.5 2.0 V V V = V , I = 250A GS(TH) DS GS D 25 30 V = 10V, I = 5.8A GS D Static Drain-Source On-Resistance R - m DS(ON) 30 42 V = 4.5V, I = 4.8A GS D Diode Forward Voltage - 0.75 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) - - Input Capacitance C 500 pF iss V = 15V, V = 0V, DS GS - - Output Capacitance C 52 pF oss f = 1.0MHz - - Reverse Transfer Capacitance C 44 pF rss - 2.3 - Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS - 5.0 - Total Gate Charge (V = 4.5V) Q nC GS g - 10.6 - nC Total Gate Charge (V = 10V) Q GS g V = 15V, I = 5.8A DS D Gate-Source Charge - 1.3 - nC Q gs Gate-Drain Charge - 1.8 - nC Q gd Turn-On Delay Time - 2.2 - ns t D(ON) Turn-On Rise Time - 2.6 - ns t V = 15V, V = 10V, R DD GS 9.7 Turn-Off Delay Time t - - ns R = 2.6, R = 3 D(OFF) L G 2.0 Turn-Off Fall Time t - - ns F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN3032LFDB July 2018 Diodes Incorporated www.diodes.com Document number: DS35730 Rev. 4 - 2