Product Information

STI55NF03L

STI55NF03L electronic component of STMicroelectronics

Datasheet
N-Channel 30 V 55A (Tc) 80W (Tc) Through Hole I2PAK
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.1444 ea
Line Total: USD 2.14

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1
Multiples : 1

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STI55NF03L
STMicroelectronics

1 : USD 2.1444
10 : USD 1.84
100 : USD 1.4339
500 : USD 1.1846

0 - WHS 2


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

STI55NF03L
STMicroelectronics

1 : USD 4.5826
10 : USD 1.657

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Series
Brand
Configuration
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STI55NF03L N-channel 30 V, 0.01 , 55 A, IPAK STripFET II Power MOSFET Features Type V R max I DSS DS(on) D STI55NF03L 30 V < 0.013 55 A Optimized for high switching operation Low gate charge 3 2 1 Logic level gate drive IPAK Application Switching applications Automotive Figure 1. Internal schematic diagram Description This Power MOSFET is the latest development of OR 4 STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility. 3 - V Table 1. Device summary Order code Marking Package Packaging STI55NF03L 55NF03L IPAK Tube May 2011 Doc ID 018838 Rev 1 1/12 www.st.com 12Contents STI55NF03L Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits . 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 018838 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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