Product Information

STI13NM60N

STI13NM60N electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK

Manufacturer: STMicroelectronics
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Price (USD)

1: USD 5.454 ea
Line Total: USD 5.454

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1

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STI13NM60N
STMicroelectronics

1 : USD 4.3573
10 : USD 3.7727
100 : USD 3.0319
500 : USD 2.491
1000 : USD 2.3501

0 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

STI13NM60N
STMicroelectronics

1 : USD 5.454
10 : USD 1.9764
25 : USD 1.8576
100 : USD 1.5876
500 : USD 1.3068
1000 : USD 1.0692

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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STF13NM60N, STI13NM60N STP13NM60N, STU13NM60N Datasheet N-channel 600 V, 280 m typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, IPAK, TO-220 and IPAK packages TAB Features V R max. I Order codes DS DS(on) D 3 2 3 1 2 1 STF13NM60N 2 TO-220FP I PAK STI13NM60N 600 V 360 m 11 A TAB STP13NM60N TAB STU13NM60N 3 3 100% avalanche tested 2 2 1 1 Low input capacitance and gate charge TO-220 IPAK Low gate input resistance D(2, TAB) Applications Switching applications G(1) Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a S(3) vertical structure to the companys strip layout to yield one of the worlds lowest on- NG1D2TS3 resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STF13NM60N STI13NM60N STP13NM60N STU13NM60N DS6112 - Rev 6 - October 2020 www.st.com For further information contact your local STMicroelectronics sales office.STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP IPAK, TO-220, IPAK V Drain-source voltage 600 V DS V Gate-source voltage 25 V GS (1) Drain current (continuous) at T = 25 C 11 11 C I D A (1) Drain current (continuous) at T = 100 C 6.9 6.9 C (2) (1) I Drain current pulsed 44 44 A DM P Total power dissipation at T = 25 C 25 90 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns Insulation withstand voltage (RMS) from all three V 2.5 kV ISO leads to external heat sink (t = 1 s, T = 25 C) C T Operating junction temperature range C J -55 to 150 T Storage temperature range C stg 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 11 A, di/dt 400 A/s, V = 80% V . SD DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit TO-220FP IPAK, TO-220 IPAK R Thermal resistance junction-case 5 1.39 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-a Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 3.5 A AS (pulse width limited by T max) J Single-pulse avalanche energy E 200 mJ AS (starting T = 25 C, I = I , V = 50 V) J D AS DD DS6112 - Rev 6 page 2/20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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