STI6N90K5 STMicroelectronics

STI6N90K5 N-channel 900 V, 0.91 typ., 6 A MDmesh K5 Power MOSFET in an IPAK package Datasheet - production data Features TAB Order code VDS RDS(on) max. ID STI6N90K5 900 V 1.10 6 A Industrys lowest RDS(on) x area Industrys best FoM (figure of merit) Ultra-low gate charge 3 2 1 100% avalanche tested Zener-protected IPAK Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STI6N90K5 6N90K5 IPAK Tube November 2016 DocID029949 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STI6N90K5 Contents 1 Electrical ratings ............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ...................................................................................... 8 4 Package information ........................................................................ 9 4.1 IPAK package information ............................................................... 9 5 Revision history .............................................................................. 11 2/12 DocID029949 Rev 1