STI6N95K5 STMicroelectronics

STI6N95K5 N-channel 950 V, 1 typ., 9 A MDmesh K5 Power MOSFET in an IPAK package Datasheet - production data Features TAB Order code V R max. I P DS DS(on) D TOT STI6N95K5 950 V 1.25 9 A 90 W Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) 3 Ultra-low gate charge 2 1 100% avalanche tested Zener-protected IPAK Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STI6N95K5 6N95K5 IPAK Tube May 2017 DocID030594 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STI6N95K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 IPAK package information ............................................................... 9 5 Revision history ............................................................................ 11 2/12 DocID030594 Rev 1