Product Information

STI76NF75

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Datasheet

MOSFET POWER MOSFET
A low RDS(ON) N-Channel logic level MOSFET optimized for USB-C applications.
Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 1.2047 ea
Line Total: USD 60.24

0 - Global Stock

MOQ: 50 Multiples: 50
Pack Size: 50

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 16 May to Mon. 20 May MOQ : 1 Multiples : 1 STI76NF75 STMicroelectronics	1 : USD 6.7056 10 : USD 2.4234 25 : USD 2.2783 100 : USD 1.947 500 : USD 1.5948 1000 : USD 1.3256

0 - WHS 2 Ships to you between Fri. 10 May to Thu. 16 May MOQ : 50 Multiples : 50 STI76NF75 STMicroelectronics	50 : USD 1.2047

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Additional Infomation About Product

The STI76NF75 is a N-channel logic level field-effect transistor (FET) with a 40V drain-source voltage (VDS) rating and 10.2A drain current (ID) rating at 25°C. It is suitable for use in low-level switching and general purpose applications. The STI76NF75 has an embedded diode to protect against reverse current, and a low gate-to-source threshold voltage (VGS(th)) of 8V, so it can be driven with lower gate voltages, resulting in reduced drive power.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 80 A 80 A
Vds - Drain-Source Breakdown Voltage 75 V 75 V
Rds On - Drain-Source Resistance 9.5 mOhms 9.5 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2 V 2 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 300 W 300 W
Mounting Style Through Hole Through Hole
Package / Case TO - 262 - 3 TO - 262 - 3
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 160 nC 160 nC
Channel Mode Enhancement Enhancement
Qualification Aec - Q101 Aec - Q101
Series Sti76nf75 Sti76nf75
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 50 50
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Forward Transconductance - Min 20 S 20 S
Cnhts 8541290000 8541290000
Fall Time 30 ns 30 ns
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Rise Time 100 ns 100 ns
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-Off Delay Time 66 ns 66 ns
Typical Turn-On Delay Time 25 ns 25 ns