X-On Electronics has gained recognition as a prominent supplier of NTD5C688NLT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD5C688NLT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD5C688NLT4G ON Semiconductor

NTD5C688NLT4G electronic component of ON Semiconductor
NTD5C688NLT4G ON Semiconductor
NTD5C688NLT4G MOSFETs
NTD5C688NLT4G  Semiconductors

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See Product Specifications
Part No. NTD5C688NLT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET T6 60V LL DPAK
Datasheet: NTD5C688NLT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.3566 ea
Line Total: USD 3.36 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 3.3566
10 : USD 3.1812
25 : USD 2.8938
50 : USD 2.635
100 : USD 2.6076
250 : USD 2.5555
500 : USD 2.5555
1000 : USD 2.5555

0
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 0.5865

0
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 4.3022
10 : USD 1.5518
25 : USD 1.4623
100 : USD 1.2534
500 : USD 1.0246
1000 : USD 0.8475
2500 : USD 0.7689

0
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 3.7044
5 : USD 3.3651
7 : USD 2.5402
17 : USD 2.4017

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD5C688NLT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD5C688NLT4G and other electronic components in the MOSFETs category and beyond.

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NTD5C688NL Power MOSFET 60 V, 27.4 m , 17 A, Single NChannel Features Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant V R I (BR)DSS DS(on) D MAXIMUM RATINGS (T = 25C unless otherwise noted) J 27.4 m 10 V Parameter Symbol Value Unit 60 V 17 A 40 m 4.5 V DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS D Continuous Drain Cur- T = 25C I 17 A C D rent R (Notes 1 & 3) JC T = 100C 12 C Steady State Power Dissipation R T = 25C P 18 W JC C D (Note 1) T = 100C 9.1 G C Continuous Drain T = 25C I 7.5 A A D Current R JA S T = 100C 5.3 (Notes 1, 2 & 3) A Steady NCHANNEL MOSFET State Power Dissipation R T = 25C P 3.4 W JA A D (Notes 1 & 2) T = 100C 1.7 A 4 Pulsed Drain Current T = 25C, t = 10 s I 77 A A p DM 2 1 Operating Junction and Storage Temperature T , T 55 to C J stg 3 175 DPAK Source Current (Body Diode) I 20 A S CASE 369C Single Pulse DraintoSource Avalanche E 48 mJ STYLE 2 AS Energy (I = 1 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) MARKING DIAGRAM & PIN ASSIGNMENT Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 4 assumed, damage may occur and reliability may be affected. Drain THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) (Note 1) R 8.3 C/W JC 2 JunctiontoAmbient Steady State (Note 2) R 44 JA Drain 1 3 Gate Source 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. A = Assembly Location 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. Y = Year 3. Maximum current for pulses as long as 1 second is higher but is dependent WW = Work Week on pulse duration and duty cycle. 5C688L = Device Code G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2018 Rev. 2 NTD5C688NL/D AYWW 5C 688LGNTD5C688NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 27 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 10 DSS J V = 0 V, GS V = 60 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 15 A 1.2 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.4 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 10 A 22.8 27.4 m DS(on) GS D V = 4.5 V, I = 10 A 32 40 GS D Forward Transconductance g V = 55 V, I = 10 A 20 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance C 400 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 170 oss V = 25 V DS Reverse Transfer Capacitance C 12 rss Total Gate Charge Q nC V = 4.5 V 3.4 G(TOT) GS V = 30 V, DS I = 10 A D V = 10 V 7.0 GS Threshold Gate Charge Q 0.9 nC G(TH) GatetoSource Charge Q 1.5 GS V = 4.5 V, V = 30 V, GS DS I = 10 A GatetoDrain Charge Q D 1.1 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 8 ns d(on) Rise Time t 42 r V = 4.5 V, V = 30 V, GS DS I = 10 A, R = 2.5 TurnOff Delay Time t D G 11 d(off) Fall Time t 24 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 V SD J V = 0 V, GS I = 10 A S T = 125C 0.8 J Reverse Recovery Time t 17 ns RR Charge Time ta 8 V = 0 V, dI /dt = 100 A/ s, GS S I = 10 A S Discharge Time tb 9 Reverse Recovery Charge Q 10 nC RR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

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