NTD5C688NL Power MOSFET 60 V, 27.4 m , 17 A, Single NChannel Features Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant V R I (BR)DSS DS(on) D MAXIMUM RATINGS (T = 25C unless otherwise noted) J 27.4 m 10 V Parameter Symbol Value Unit 60 V 17 A 40 m 4.5 V DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS D Continuous Drain Cur- T = 25C I 17 A C D rent R (Notes 1 & 3) JC T = 100C 12 C Steady State Power Dissipation R T = 25C P 18 W JC C D (Note 1) T = 100C 9.1 G C Continuous Drain T = 25C I 7.5 A A D Current R JA S T = 100C 5.3 (Notes 1, 2 & 3) A Steady NCHANNEL MOSFET State Power Dissipation R T = 25C P 3.4 W JA A D (Notes 1 & 2) T = 100C 1.7 A 4 Pulsed Drain Current T = 25C, t = 10 s I 77 A A p DM 2 1 Operating Junction and Storage Temperature T , T 55 to C J stg 3 175 DPAK Source Current (Body Diode) I 20 A S CASE 369C Single Pulse DraintoSource Avalanche E 48 mJ STYLE 2 AS Energy (I = 1 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) MARKING DIAGRAM & PIN ASSIGNMENT Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 4 assumed, damage may occur and reliability may be affected. Drain THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) (Note 1) R 8.3 C/W JC 2 JunctiontoAmbient Steady State (Note 2) R 44 JA Drain 1 3 Gate Source 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. A = Assembly Location 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. Y = Year 3. Maximum current for pulses as long as 1 second is higher but is dependent WW = Work Week on pulse duration and duty cycle. 5C688L = Device Code G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2018 Rev. 2 NTD5C688NL/D AYWW 5C 688LGNTD5C688NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 27 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 10 DSS J V = 0 V, GS V = 60 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 15 A 1.2 2.1 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.4 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 10 A 22.8 27.4 m DS(on) GS D V = 4.5 V, I = 10 A 32 40 GS D Forward Transconductance g V = 55 V, I = 10 A 20 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance C 400 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 170 oss V = 25 V DS Reverse Transfer Capacitance C 12 rss Total Gate Charge Q nC V = 4.5 V 3.4 G(TOT) GS V = 30 V, DS I = 10 A D V = 10 V 7.0 GS Threshold Gate Charge Q 0.9 nC G(TH) GatetoSource Charge Q 1.5 GS V = 4.5 V, V = 30 V, GS DS I = 10 A GatetoDrain Charge Q D 1.1 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 8 ns d(on) Rise Time t 42 r V = 4.5 V, V = 30 V, GS DS I = 10 A, R = 2.5 TurnOff Delay Time t D G 11 d(off) Fall Time t 24 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 V SD J V = 0 V, GS I = 10 A S T = 125C 0.8 J Reverse Recovery Time t 17 ns RR Charge Time ta 8 V = 0 V, dI /dt = 100 A/ s, GS S I = 10 A S Discharge Time tb 9 Reverse Recovery Charge Q 10 nC RR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2