STL11N3LLH6 STMicroelectronics

STL11N3LLH6 N-channel 30 V, 6 m typ., 11 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package Datasheet - production data Features Order code V R max I DS DS(on) D STL11N3LLH6 30 V 7.5 m 11 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description Figure 1: Internal schematic diagram This device is an N-channel Power MOSFET developed using the STripFET H6 technology D(5, 6, 7, 8) with a new trench gate structure. The resulting 6 5 8 7 Power MOSFET exhibits very low R in all DS(on) packages. G(4) S(1, 2, 3) 1 2 3 4 AM15810v1 Table 1: Device summary Order code Marking Package Packing TM STL11N3LLH6 11N3L PowerFLAT 3.3x3.3 Tape and reel February 2017 DocID17755 Rev 3 1/14 www.st.com This is information on a product in full production. Contents STL11N3LLH6 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFLAT 3.3x3.3 package information .................................... 10 5 Revision history ............................................................................ 13 2/14 DocID17755 Rev 3